A X-band CMOS power amplifier with on-chip transmission line transformers

被引：0
|
作者：
Ku, Bon-Hyun [1 ]
Baek, Sang-Hyun [1 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea
来源：
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年
关键词：
CMOS power amplifiers; X-band; transmission line transformers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A X-band CMOS power amplifier (PA) has been fabricated using a 0.18-mu m CMOS technology. On-chip transmission line transformers are used as matching elements for output, input, and inter-stage matching. The power amplifier provides the saturated output power of 23.5 dBm and 1-dB gain-compressed output power (P-1dB) is 21 dBm at 8.5 GHz with 3.3 V supply. The gain is 29 dB and power-added-efficiency (PAE) is 19 % at 8.5 GM. Among the reported X/Ku band CMOS power amplifiers, this amplifier has the largest output power.
引用
收藏
页码：471 / 474
页数：4
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