An alternative approach for femtosecond laser induced black silicon in ambient air

被引：33
作者：
Ma, Yuncan
Ren, Hai
Si, Jinhai [1 ]
Sun, Xuehui
Shi, Haitao
Chen, Tao
Chen, Feng
Hou, Xun
机构：
[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Minist Educ, Lab Phys Elect & Devices, Xian 710049, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2012年 / 261卷
基金：
美国国家科学基金会;
关键词：
Black silicon; Femtosecond laser; Selectively etching; Absorption; Ambient air; SURFACE; BAND; MICRO; CELLS;
D O I：
10.1016/j.apsusc.2012.08.087
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An alternative approach for femtosecond laser induced black silicon in ambient air is proposed, in which, black silicon is fabricated on a tellurium coated silicon substrate via femtosecond laser irradiation in ambient air, and selectively etching with hydrofluoric acid is employed to remove the incorporated oxygen. Results of energy dispersive X-ray spectroscopy analysis and absorption measurement show that oxygen is effectively eliminated via etching, and the optical absorption of the black silicon is enhanced. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：722 / 726
页数：5
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