Oscillator strengths of A, B, and C excitons in ZnO films -: art. no. 201310

被引：78
|
作者：
Gil, B [1 ]
机构：
[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.64.201310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We examine how the short-range part of the electron-hole exchange interaction influences the strain-induced variations of the oscillator strength in ZnO films. Our model enables us to account for the surprisingly small oscillator strength of the A exciton in E perpendicular to c polarization without having to invoke any inverted valence-band scheme. We then conclude that the valence-band physics is very similar in both ZnO and GaN.
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页数：3
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