Chemical Mechanical Planarization from Macro-Scale to Molecular-Scale

被引：23

作者：

Wang, Y. ^{[1
]}

Zhao, Y. W. ^{[1
]}

Chen, X. ^{[1
]}

机构：

[1] Jiangnan Univ, Sch Mech Engn, Wuxi 214122, Jiangsu, Peoples R China

来源：

MATERIALS AND MANUFACTURING PROCESSES | 2012年 / 27卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Chemical mechanical planarization; Macro-scale; Mechanism; Molecular-scale; MATERIAL REMOVAL RATE; ABRASIVE SIZE DISTRIBUTION; PARTICLE ADHESION; KINETICS MODEL; MICRO-CONTACT; SINGLE-PARTICLE; SURFACE FINISH; WEAR BEHAVIOR; PRESSURE; CMP;

D O I：

10.1080/10426914.2011.593244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical mechanical planarization (CMP) has been an essential method to fabricate wafer surfaces in IC industry. This article provides a relatively comprehensive review on the state-of-the-art and recent progress in the modeling of CMP and material removal mechanism, and addresses the limitations and further research directions of the modeling work and material removal mechanism.

引用

页码：641 / 649

页数：9

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