Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal Growth

被引：1

作者：

Liu, Xin ^{[1
]}

Liu, Lijun ^{[1
]}

Wang, Yuan ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期

关键词：

SILICON MELT; FLOW; SIMULATION; CONVECTION; MODEL;

D O I：

10.1149/1.3567724

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Three dimensional (3D) unsteady computations were carried out to understand the effects of transverse magnetic field (TMF) on thermal fluctuations in the melt of a 300 mm Cz-Si crystal growth. A developed LES program with the dynamic SGS model was employed to predict the melt turbulence with or without TMF. The effects of TMF on statistical behaviors of the melt convection were studied. It was found that the thermal fluctuations in the crystallization zone decreased significantly when the TMF was applied. This indicates that the TMF can suppress the flow instability in the melt of the Cz-Si crystal growth.

引用

页码：1123 / 1128

页数：6

共 16 条

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