Digital alloys of AlN/AlGaN for deep UV light emitting diodes

被引：53

作者：

Nikishin, SA ^{[1
]}

Holtz, M ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

LED; GSMBE; ultraviolet; AlGaN; short period superlattice; digital alloys;

D O I：

10.1143/JJAP.44.7221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al(0.08)Ga(0.92)N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al(0.08)Ga(0.92)N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys with effective bandgap of 5.1 eV, average AlN composition 72%, we obtain room temperature electron concentrations up to 1 x 10(19) cm(-3) and resistivity of 0.005 Omega(.)cm and hole concentrations of 1 x 10(18) cm(-3) with resistivity of 6 Omega(.)cm. Light emitting diodes based on digital alloys are demonstrated operating in the range of 250 to 290 nm.

引用

页码：7221 / 7226

页数：6

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