Optimization of electromechanical coupling for a thin-film PZT membrane: II. Experiment

被引:68
作者
Cho, J [1 ]
Anderson, M
Richards, R
Bahr, D
Richards, C
机构
[1] Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA
[2] Univ Idaho, Dept Engn Mech, Moscow, ID 83844 USA
关键词
D O I
10.1088/0960-1317/15/10/003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The optimization of the electromechanical coupling coefficient for thin-film piezoelectric membranes is investigated experimentally. The membranes are a two-dimensional laminate structure consisting of a lead zirconate titanate (PbZrxTi1-xO3, PZT) stack on a silicon substrate. PZT thickness, substrate thickness, residual stress, side length and electrode coverage are varied. The results show that the residual stress has a dominant effect on the magnitude of the electromechanical coupling coefficient. The PZT to silicon thickness ratio is important and may be tailored to optimize the electromechanical coupling coefficient. An electrode coverage of 60% produces the optimum coupling. Application of a dc bias also leads to increased coupling. In general, the results are in good agreement with the trends predicted by the model developed in part I. The results can be used to form a set of design guidelines for the performance optimization of micromachined piezoelectric membrane generators.
引用
收藏
页码:1804 / 1809
页数:6
相关论文
共 36 条
  • [1] AKESHEH F, 2004, SENSOR ACTUAT A-PHYS, V111, P275
  • [2] CONTRIBUTION OF ELECTRODES AND MICROSTRUCTURES TO THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS
    ALSHAREEF, HN
    KINGON, AI
    CHEN, X
    BELLUR, KR
    AUCIELLO, O
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) : 2968 - 2975
  • [3] Baborowski J, 2002, ULTRASON, P1051
  • [4] BUDD KD, 1989, BR CERAM P, V36, P107
  • [5] Chen SY, 1998, J AM CERAM SOC, V81, P97, DOI 10.1111/j.1151-2916.1998.tb02300.x
  • [6] CHO J, 2004, P ASME INT C 13 20 N
  • [7] High strain behavior of composite thin film piezoelectric membranes
    Demir, I
    Olson, AL
    Skinner, JL
    Richards, CD
    Richards, RF
    Bahr, DF
    [J]. MICROELECTRONIC ENGINEERING, 2004, 75 (01) : 12 - 23
  • [8] Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: Theoretical expectation for thin films
    Du, XH
    Belegundu, U
    Uchino, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5580 - 5587
  • [9] Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films
    Dubois, MA
    Muralt, P
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1999, 77 (02) : 106 - 112
  • [10] Effect of electrodes on crystallization and electrical properties of ferroelectric PZT films deposited by rf magnetron sputtering
    EaKim, B
    Varniere, F
    Hugon, MC
    Agius, B
    Bisaro, R
    Olivier, J
    [J]. FERROELECTRIC THIN FILMS V, 1996, 433 : 163 - 168