DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

被引：1

作者：

Muhtadi, Sakib M. ^{[1
]}

Hossain, S. M. Sajjad ^{[1
]}

Bhuiyan, Ashraful G. ^{[1
,2
]}

Sugita, K. ^{[2
]}

Hashimoto, A. ^{[2
]}

Yamamoto, A. ^{[2
]}

Hossain, M. Mofazzal ^{[3
]}

机构：

[1] KUET, Dept Elect & Elect Engn, Khulna 9203, Bangladesh

[2] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan

[3] East West Univ, Dept Elect & Commun Engn, Dhaka 1212, Bangladesh

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

In0.1Ga0.9N/InN; dc and rf performances; high electron mobility transistor; FIELD-EFFECT TRANSISTORS; MODEL; GATE; INN; CIRCUITS; HEMTS; GAS;

D O I：

10.1002/pssc.201000979

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on a theoretical analysis of DC and RF performances of a novel In0.1Ga0.9N/InN HEMT. A very high cut-off frequency and attractive DC characteristics have been predicted. A simple analytical model is used to explain the DC characteristics. The cut-off frequency which has been found more than 0.6 THz for a gate length of 0.1 mu m is explained with low-field mobility. The maximum drain current and transconductance have been found around 1000 mA/mm and 625 mS/mm, respectively. Similar analysis have been performed for the conventional AlGaN/GaN HEMT and compared with the proposed InGaN/InN HEMT. The predicted results are found to be in good agreement with previously published results. The calculated results show that InN-based HEMT has very high cut-off frequency and transconductance when compared with the conventional GaN-based HEMT for the same gate length. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2292 / 2295

页数：4

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