A 3-10GHz bandwidth low noise amplifier for ultra-wideband application using SiGe HBT technology

被引：0

作者：

Li Jia ^{[1
]}

Zhang Wan-rong ^{[1
]}

Xie Hong-yun ^{[1
]}

Zhang Wei ^{[1
]}

He Li-jian ^{[1
]}

Shen Pei ^{[1
]}

Gan Jun-ning ^{[1
]}

机构：

[1] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100022, Peoples R China

来源：

2008 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, VOLS 1-4 | 2008年

关键词：

low-noise amplifier; feedback; SiGeHBT; ultra-wideband (UWB);

D O I：

10.1109/ICMMT.2008.4540684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain together with low noise figure (NF) and good input and output impedance match. Using 0.35 mu m SiGe HBT process, the simulated results show 11.9dB of gain(S(21)) with 1.7 dB of variation over the 3GHz to 10GHz band, and a low NF ranging from 3.6 dB to 3.98 dB while consuming a de power of only 10mW. The matched input and output reflectance (S(11) and S(22)) are less than -5 dB and -10 dB respectively. At the same time, LNA is unconditionally stable over the entire band.

引用

页码：1330 / 1333

页数：4

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