Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology

被引：69

作者：

Gaillardin, Marc ^{[1
]}

Goiffon, Vincent ^{[2
]}

Girard, Sylvain ^{[1
]}

Martinez, Martial ^{[1
]}

Magnan, Pierre ^{[2
]}

Paillet, Philippe ^{[1
]}

机构：

[1] CEA, F-91297 Arpajon, France

[2] ISAE, F-31055 Toulouse, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Deep submicron (DSM) bulk technology; metal-oxide semiconductor (MOS) transistors; radiation-induced narrow channel effect (RINCE); total ionizing dose; INTERFACE STATE GENERATION; TRAP BUILDUP; CHARGE; DEPENDENCE; BIAS;

D O I：

10.1109/TNS.2011.2170854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 mu m bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.

引用

页码：2807 / 2815

页数：9

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