Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology

被引：69
作者：
Gaillardin, Marc [1 ]
Goiffon, Vincent [2 ]
Girard, Sylvain [1 ]
Martinez, Martial [1 ]
Magnan, Pierre [2 ]
Paillet, Philippe [1 ]
机构：
[1] CEA, F-91297 Arpajon, France
[2] ISAE, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期
关键词：
Deep submicron (DSM) bulk technology; metal-oxide semiconductor (MOS) transistors; radiation-induced narrow channel effect (RINCE); total ionizing dose; INTERFACE STATE GENERATION; TRAP BUILDUP; CHARGE; DEPENDENCE; BIAS;
D O I：
10.1109/TNS.2011.2170854
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 mu m bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.
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收藏
页码：2807 / 2815
页数：9
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