Band offsets at the ZnSe/CuGaSe2(001) heterointerface

被引：26

作者：

Bauknecht, A

Blieske, U

Kampschulte, T

Albert, J

Sehnert, H

Lux-Steiner, MC

Klein, A

Jaegermann, W

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

[2] Tech Univ Darmstadt, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.123455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of the ZnSe/CuGaSe2 heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe2 (001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be Delta E-V = 0.6 +/-0.1 eV. As a consequence, a nearly symmetric "type-I'' band alignment for the ZnSe/CuGaSe2 heterojunction with a conduction-band offset of Delta E-C = 0.4+/-0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe2-based thin-film solar cells. (C) 1999 American Institute of Physics. [S0003-6951(99)01008-6].

引用

页码：1099 / 1101

页数：3

共 16 条

[1] Interfacial chemical bonds, reactions, and band alignment in ZnSe/GaAs(001) heterojunctions [J].