Photoluminescence of amorphous niobium oxide films synthesized by solid-state reaction

被引：13

作者：

Zhou, Xiaofeng ^{[1
,2
]}

Li, Zhengcao ^{[1
]}

Wang, Yuquan ^{[1
]}

Sheng, Xing ^{[1
]}

Zhang, Zhengjun ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

[2] Qujing Normal Coll, Dept Phys, Qujing 655000, Peoples R China

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

基金：

中国国家自然科学基金;

关键词：

photoluminescence; amorphous niobium oxide films; solid-state reaction;

D O I：

10.1016/j.tsf.2007.12.112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Niobium oxide amorphous films were deposited on silicon substrates at a temperature range of 300-400 degrees C by heating a pure niobium foil in a rough vacuum. The films were amorphous in structure and with morphology of vertically aligned nano-columns. This feature resulted in interesting photoluminescence (PL) property in the visible light range. The intensity of the photoluminescence spectrum of the as-deposited amorphous film is small. However, the PL intensity of the same sample after annealing below 500 degrees C increases greatly and consists of two peaks centered at similar to 630 nm (1.97 eV) and similar to 715 nm (1.74 eV). The mechanism for the PL behavior of the amorphous niobium oxide films was also investigated and discussed. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：4213 / 4216

页数：4

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