Characterization of Atomic Layer Deposited Cobalt Oxide

被引：5
|
作者：
Holden, K. E. K. [1 ]
Jenkins, M. A. [1 ]
Conley, J. F., Jr. [1 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97330 USA
来源：
SELECTED PROCEEDINGS FROM THE 233RD ECS MEETING | 2018年 / 85卷 / 13期
基金：
美国国家科学基金会;
关键词：
OPTICAL-PROPERTIES; THIN-FILMS; CO3O4;
D O I：
10.1149/08513.0735ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The electrical, optical, and structural properties of cobalt oxide films deposited via atomic layer deposition using Co(Cp)(2) and O-3 are investigated. At 250 degrees C, growth is 0.50 angstrom per cycle and smooth uniform films are deposited across a 5 '' wafer with atomic force microscopy showing a root mean square roughness of 0.4 nm. Spectroscopic ellipsometry indicates a refractive index of approximately 2.8 at 632.8 nm while grazing incidence X-ray diffraction of as-deposited films shows cubic Co3O4, a p-type semiconducting phase. Semiconducting behavior is supported by current density versus electric field measurements.
引用
收藏
页码：735 / 741
页数：7
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