High thermoelectric figure of merit in heavy hole dominated PbTe

被引:652
|
作者
Pei, Yanzhong [1 ]
LaLonde, Aaron [1 ]
Iwanaga, Shiho [1 ]
Snyder, G. Jeffrey [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
2ND VALENCE-BAND; LEAD TELLURIDE; THERMAL CONDUCTIVITY; CHALCOGENIDES; COEFFICIENT; EFFICIENCY; PBSE;
D O I
10.1039/c0ee00456a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thermoelectric transport properties of p-type PbTe:Na, with high hole concentrations of approximately 10(20) cm(-3), are reinvestigated from room temperature to 750 K. The greatly enhanced Seebeck coefficient at these doping levels can be understood by the presence of a sharp increase in the density of states around the Fermi level. As a result, the thermoelectric figure of merit, zT, reaches similar to 1.4 at 750 K. The influence of these heavy hole carriers may contribute to a similarly high zT observed in related p-type PbTe-based systems such as Tl-doped PbTe and nanostructured composite materials.
引用
收藏
页码:2085 / 2089
页数:5
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