High thermoelectric figure of merit in heavy hole dominated PbTe

被引：652

作者：

Pei, Yanzhong ^{[1
]}

LaLonde, Aaron ^{[1
]}

Iwanaga, Shiho ^{[1
]}

Snyder, G. Jeffrey ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2011年 / 4卷 / 06期

关键词：

2ND VALENCE-BAND; LEAD TELLURIDE; THERMAL CONDUCTIVITY; CHALCOGENIDES; COEFFICIENT; EFFICIENCY; PBSE;

D O I：

10.1039/c0ee00456a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thermoelectric transport properties of p-type PbTe:Na, with high hole concentrations of approximately 10(20) cm(-3), are reinvestigated from room temperature to 750 K. The greatly enhanced Seebeck coefficient at these doping levels can be understood by the presence of a sharp increase in the density of states around the Fermi level. As a result, the thermoelectric figure of merit, zT, reaches similar to 1.4 at 750 K. The influence of these heavy hole carriers may contribute to a similarly high zT observed in related p-type PbTe-based systems such as Tl-doped PbTe and nanostructured composite materials.

引用

页码：2085 / 2089

页数：5

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