High thermoelectric figure of merit in heavy hole dominated PbTe

被引：652
|
作者：
Pei, Yanzhong [1 ]
LaLonde, Aaron [1 ]
Iwanaga, Shiho [1 ]
Snyder, G. Jeffrey [1 ]
机构：
[1] CALTECH, Pasadena, CA 91125 USA
来源：
ENERGY & ENVIRONMENTAL SCIENCE | 2011年 / 4卷 / 06期
关键词：
2ND VALENCE-BAND; LEAD TELLURIDE; THERMAL CONDUCTIVITY; CHALCOGENIDES; COEFFICIENT; EFFICIENCY; PBSE;
D O I：
10.1039/c0ee00456a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Thermoelectric transport properties of p-type PbTe:Na, with high hole concentrations of approximately 10(20) cm(-3), are reinvestigated from room temperature to 750 K. The greatly enhanced Seebeck coefficient at these doping levels can be understood by the presence of a sharp increase in the density of states around the Fermi level. As a result, the thermoelectric figure of merit, zT, reaches similar to 1.4 at 750 K. The influence of these heavy hole carriers may contribute to a similarly high zT observed in related p-type PbTe-based systems such as Tl-doped PbTe and nanostructured composite materials.
引用
收藏
页码：2085 / 2089
页数：5
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