Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy

被引：4

作者：

Zon ^{[1
]}

Phienlumlert, Pakawat ^{[1
]}

Thainoi, Supachok ^{[1
]}

Kiravittaya, Suwit ^{[2
]}

Tandaechanurat, Aniwat ^{[3
]}

Nuntawong, Noppadon ^{[4
]}

Sopitpan, Suwat ^{[5
]}

Yordsri, Visittapong ^{[6
]}

Thanachayanont, Chanchana ^{[6
]}

Kanjanachuchai, Songphol ^{[1
]}

Ratanathammaphan, Somchai ^{[1
]}

Panyakeow, Somsak ^{[1
]}

Ota, Yasutomo ^{[7
,8
]}

Iwamoto, Satoshi ^{[7
,8
]}

Arakawa, Yasuhiko ^{[7
,8
]}

机构：

[1] Chulalongkorn Univ, Dept Elect Engn, Fac Engn, SDRL, Bangkok 10330, Thailand

[2] Naresuan Univ, Dept Elect & Comp Engn, Fac Engn, Adv Opt Technol Lab AOT Lab, Phitsanulok 65000, Thailand

[3] Chulalongkorn Univ, Fac Engn, ISE, Bangkok 10330, Thailand

[4] NSTDA, Natl Elect & Comp Technol Ctr NECTEC, Pathum Thani 12120, Thailand

[5] NSTDA, Thai Microelect Ctr TMEC, Chachoengsao 24000, Thailand

[6] NSTDA, Natl Met & Mat Technol Ctr MTEC, Pathum Thani 12120, Thailand

[7] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan

[8] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 01期

关键词：

GaSb/GaAs; Ge substrate; molecular beam epitaxy; quantum dots;

D O I：

10.1002/pssa.201800499

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.

引用

页数：6

共 24 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs [J].

Balakrishnan, G. ;

Tatebayashi, J. ;

Khoshakhlagh, A. ;

Huang, S. H. ;

Jallipalli, A. ;

Dawson, L. R. ;

Huffaker, D. L. .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[3] Self-assembled InSb and GaSb quantum dots on GaAs(001) [J].

Bennett, BR ;

Thibado, PM ;

Twigg, ME ;

Glaser, ER ;

Magno, R ;

Shanabrook, BV ;

Whitman, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2195-2198

[4]

Bimberg D, 2008, NANOSCI TECHNOL, P1, DOI 10.1007/978-3-540-77899-8

[5] Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns [J].

Chokamnuai, T. ;

Rattanadon, P. ;

Thainoi, S. ;

Panyakeow, S. ;

Kanjanachuchai, S. .

JOURNAL OF CRYSTAL GROWTH, 2013, 378 :524-528

[6] Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system [J].

Dubrovskii, VG ;

Egorov, VA ;

Cirlin, GE ;

Polyakov, NK ;

Samsonenko, YB ;

Kryzhanovskaya, NV ;

Tsatsul'nikov, AF ;

Ustinov, VM .

SEMICONDUCTORS, 2003, 37 (07) :855-860

[7] Hole storage in GaSb/GaAs quantum dots for memory devices [J].

Geller, M ;

Kapteyn, C ;

Müller-Kirsch, L ;

Heitz, R ;

Bimberg, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 238 (02) :258-261

[8]

Henini M, 2008, HANDBOOK OF SELF ASSEMBLED SEMICONDUCTOR NANOSTRUCTURES FOR NOVEL DEVICES IN PHOTONICS AND ELECTRONICS, pXIX, DOI 10.1016/B978-008046325-4.00029-3

[9]

Hirth J., 1982, Theory of Dislocations, V2nd ed.

[10] Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy [J].

Kawazu, Takuya ;

Noda, Takeshi ;

Mano, Takaaki ;

Sakuma, Yoshiki ;

Sakaki, Hiroyuki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)

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