Modelling of open quantum devices within the closed-system paradigm

被引：0
作者：
Zaccaria, RP [1 ]
Lotti, RC [1 ]
Rossi, F [1 ]
机构：
[1] INFM, I-10129 Turin, Italy
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a new simulation strategy to study the non-equilibrium carrier dynamics in quantum devices with open boundaries. We propose a kinetic description of the system-reservoir thermalization process: the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly non-thermal device electrons and the thermal carrier distribution of the reservoir.
引用
收藏
页码：1469 / 1470
页数：2
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