Modelling of open quantum devices within the closed-system paradigm

We present a new simulation strategy to study the non-equilibrium carrier dynamics in quantum devices with open boundaries. We propose a kinetic description of the system-reservoir thermalization process: the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly non-thermal device electrons and the thermal carrier distribution of the reservoir.