In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers

被引:7
作者
Islam, Zahabul [1 ]
Haque, Aman [1 ]
Glavin, Nicholas [2 ]
Xian, Minghan [3 ]
Ren, Fan [3 ]
Polyakov, Alexander Y. [4 ]
Kochkova, Anastasia [4 ]
Tadjer, Marko [5 ]
Pearton, S. J. [6 ]
机构
[1] Penn State Univ, Dept Mech Engn, University Pk, PA 16802 USA
[2] Air Force Res Lab, Dayton, OH 45433 USA
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[5] US Naval Res Lab, Washington, DC 20375 USA
[6] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
基金
俄罗斯科学基金会;
关键词
Wide energy bandgap; Semiconductors; Microelectrnics - Semiconductor Materials; Ga2O3; gallium oxide; Electron Devices; SCHOTTKY-BARRIER DIODES; REVERSE BREAKDOWN; VOLTAGE;
D O I
10.1149/2162-8777/ab981d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructural changes and degradation under forward bias of vertical beta-Ga2O3 rectifiers were observed by in-situ transmission electron microscopy. The devices show both a voltage dependence for the onset of visible degradation as well as a time dependence at this threshold voltage, suggesting a defect percolation process is occurring. The degraded rectifiers show a large decrease in forward current and different types of crystal defects are present, including stacking fault tetrahedra, microcracks, Ga-rich droplets and Au inclusions from the top electrode. Continued forward bias stressing is known to lead to macro-cracks oriented along the [010] crystal orientation and eventual delamination of the epitaxial drift layer, but this study is the first to provide insight into the appearance of the smaller defects that precede the large scale mechanical failure of the rectifiers. The initial stages of bias stressing also produce an increase in deep trap states near E-C-1.2 eV. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
引用
收藏
页数:10
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