Examination of deuterium transport through device structures

We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on 0.18 mu m "metal'' oxide silicon test structures subjected to deuterium anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures. (C) 1998 American Institute of Physics. [S0003-6951(98)00149-1].