Magnetoelectric spectroscopy of Andreev bound states in Josephson quantum dots

被引:19
作者
Wentzell, Nils [1 ,2 ,3 ,4 ]
Florens, Serge [5 ,6 ]
Meng, Tobias [7 ]
Meden, Volker [8 ,9 ]
Andergassen, Sabine [1 ,3 ,4 ]
机构
[1] Univ Vienna, Fac Phys, Boltzmanngasse 5, A-1090 Vienna, Austria
[2] Vienna Univ Technol, Inst Solid State Phys, A-1040 Vienna, Austria
[3] Univ Tubingen, Inst Theoret Phys, Morgenstelle 14, D-72076 Tubingen, Germany
[4] Univ Tubingen, Ctr Quantum Sci, Morgenstelle 14, D-72076 Tubingen, Germany
[5] CNRS, Inst Neel, BP 166, F-38042 Grenoble, France
[6] Univ Grenoble Alpes, BP 166, F-38042 Grenoble, France
[7] Tech Univ Dresden, Inst Theoret Phys, D-01062 Dresden, Germany
[8] Rhein Westfal TH Aachen, Inst Theorie Stat Phys, D-52056 Aachen, Germany
[9] JARA Fundamentals Future Informat Technol, D-52056 Aachen, Germany
基金
奥地利科学基金会;
关键词
NUMERICAL RENORMALIZATION-GROUP; CARBON NANOTUBES; SUPERCONDUCTING LEADS; MAGNETIC-IMPURITIES; PHASE-TRANSITION; ANDERSON MODEL; PI-JUNCTION; SUPERCURRENT; SYSTEMS; DEVICE;
D O I
10.1103/PhysRevB.94.085151
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We theoretically investigate the behavior of Andreev levels in a single-orbital interacting quantum dot in contact with superconducting leads, focusing on the effect of electrostatic gating and applied magnetic field, as relevant for recent experimental spectroscopic studies. In order to account reliably for spin-polarization effects in the presence of correlations, we extend here two simple and complementary approaches that are tailored to capture effective Andreev levels: the static functional renormalization group (fRG) and the self-consistent Andreev bound states (SCABS) theory. We provide benchmarks against the exact large-gap solution as well as renormalization group (NRG) calculations and find good quantitative agreement in the range of validity. The large flexibility of the implemented approaches then allows us to analyze a sizable parameter space, allowing us to get a deeper physical understanding into the Zeeman field, electrostatic gate, and flux dependence of Andreev levels in interacting nanostructures.
引用
收藏
页数:14
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