On-site fabrication of crystalline cerium oxide films and patterns by ink-jet deposition method at moderate temperatures

被引：8

作者：

Gallage, Ruwan ^{[1
]}

Matsuo, Atsushi ^{[1
]}

Fujiwara, Takeshi ^{[1
]}

Watanabe, Tomoaki ^{[1
]}

Matsushita, Nobuhiro ^{[1
]}

Yoshimura, Masahiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2008年 / 91卷 / 07期

关键词：

D O I：

10.1111/j.1551-2916.2008.02402.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crystalline CeO2 films and patterns have been successfully fabricated in a "single-step process" at moderate temperature. In this process, the combination of the ink-jet technique and depositing the precursor on a hot substrate (<= 300 degrees C) gave crystalline CeO2 without further heat treatment. X-ray diffraction analysis revealed that the phase formed was crystallized ceria with nanosized (< 10 nm) crystallites. The film thickness was several hundred nanometers and the pattern width was about 150 mu m. Scanning electron microscopy analysis showed that the films and patterns were free of cracks and adhered to the substrate. This is the first report about the direct patterning of crystalline CeO2 without postfiring or posttreatments like masking, etching, etc.

引用

页码：2083 / 2087

页数：5

共 29 条

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