Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt:: comparison to experimental results

被引：60

作者：

Vizman, D

Gräbner, O

Müller, G

机构：

[1] W Univ Timisoara, Fac Phys, Dept Phys, Timisoara 1900, Romania

[2] Univ Erlangen Nurnberg, Inst Mat Sci, Crystal Growth Lab, D-91058 Erlangen, Germany

[3] Fraunhofer Inst Integrated Circuits IIS B, Dept Crystal Growth, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 233卷 / 04期

关键词：

computer simulation; convection; heat transfer; Czochralski method; semiconducting silicon;

D O I：

10.1016/S0022-0248(01)01633-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Numerical simulations were carried out in order to predict the oscillatory convection of a silicon melt induced by natural convection and forced convection due to crucible and crystal rotation in an industrial Czochralski configuration. The predicted thermal field is compared to experimental observations of the thermal field and temperature fluctuations in the melt. Temperature fluctuations have been measured during a crystal growth process using a thermocouple. The governing equations were numerically solved using the code STHAMAS 3D, based on a block-structured finite-volume Navier-Stokes solver. The three-dimensional simulation of flow was done without any turbulence model. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：687 / 698

页数：12

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