Lateral positioning of InGaAs quantum dots using a buried stressor

被引：27

作者：

Strittmatter, A. ^{[1
]}

Schliwa, A. ^{[1
]}

Schulze, J. -H. ^{[1
]}

Germann, T. D. ^{[1
]}

Dreismann, A. ^{[1
]}

Hitzemann, O. ^{[1
]}

Stock, E. ^{[1
]}

Ostapenko, I. A. ^{[1
]}

Rodt, S. ^{[1
]}

Unrau, W. ^{[1
]}

Pohl, U. W. ^{[1
]}

Hoffmann, A. ^{[1
]}

Bimberg, D. ^{[1
]}

Haisler, V. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Russian Acad Sci, Inst Semicond Phys, RU-630090 Novosibirsk, Russia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期

关键词：

gallium arsenide; III-V semiconductors; indium compounds; semiconductor quantum dots; NANOSTRUCTURES; OXIDATION; SURFACES; SHAPE;

D O I：

10.1063/1.3691251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a "bottom-up" approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691251]

引用

页数：3

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