Surface structures of tellurium on Si(111)-(7 x 7) studied by low-energy electron diffraction and scanning tunneling microscopy

被引：3

作者：

Luepke, Felix ^{[1
,2
,4
]}

Dolezal, Jiri ^{[3
]}

Cherepanov, Vasily ^{[1
,2
]}

Ostadal, Ivan ^{[3
]}

Tautz, F. Stefan ^{[1
,2
]}

Voigtlaender, Bert ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 3, D-52425 Julich, Germany

[2] JARA, Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] Charles Univ Prague, Fac Math & Phys, Dept Sulfate & Plasma Sci, Prague 18200 8, Czech Republic

[4] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

SURFACE SCIENCE | 2019年 / 681卷

关键词：

Si(111); Tellurium; Surface reconstruction; Scanning tunneling microscopy; Low-energy electron diffraction; GE;

D O I：

10.1016/j.susc.2018.11.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)-(7 x 7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)-(7 x 7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to 770 K results in a weak (7 x 7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)-(7 x 7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7 x 7) unit cells. Increasing the substrate temperature further to 920 K leads to a Te/Si(111)-(2 root 3 x 2 root 3)R30 degrees surface reconstruction. We find that this surface configuration has an atomically fiat structure with threefold symmetry.

引用

页码：130 / 133

页数：4

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