Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

被引：14
作者：
Meier, Johanna [1 ]
Bacher, Gerd [1 ]
机构：
[1] Univ Duisburg Essen, Werkstoffe Elektrotech & CENIDE, Bismarckstr 81, D-47057 Duisburg, Germany
来源：
MATERIALS | 2022年 / 15卷 / 05期
关键词：
GaN; core-shell; microrod; nanowire; LED; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; HETEROSTRUCTURES; NANOWIRES; GRAPHENE; GROWTH; ARRAYS;
D O I：
10.3390/ma15051626
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-state lighting. However, one drawback is the polarization field of the wurtzite heterostructure impacting both electron-hole overlap and emission energy. Three-dimensional core-shell microrods offer field-free sidewalls, thus improving radiative recombination rates while simultaneously increasing the light-emitting area per substrate size. Despite those promises, microrods have still not replaced planar devices. In this review, we discuss the progress in device processing and analysis of microrod LEDs and emphasize the perspectives related to the 3D device architecture from an applications point of view.
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页数：15
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