Chemical passivity of III-VI bilayer terminated Si(111)

被引:11
作者
Adams, JA [3 ]
Bostwick, AA
Ohuchi, FS
Olmstead, MA
机构
[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
[2] Univ Washington, Ctr Nanotechnol, Seattle, WA 98195 USA
[3] Univ Washington, Dept Phys, Seattle, WA 98195 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2112200
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical stability of Si(111), terminated with bilayer AlSe and GaSe, upon exposure to atmosphere, N-2 and O-2, was investigated with core-level and valence band photoelectron spectroscopy. Si(111):GaSe and Si(111):AlSe both form stable, unreconstructed surfaces with no states in the silicon energy gap; their atomic structures are nearly identical. However, similarities in surface electronic and atomic structure do not imply similar chemical passivity. While Si(111):GaSe is largely unaffected by the exposures, Si(111):AlSe reacts irreversibly with both pure O-2 and atmosphere, removing over 1/3 of the Se and permanently destroying long-range order. (C) 2005 American Institute of Physics.
引用
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页码:1 / 3
页数:3
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