Broadband Cr3+, Sn4+-Doped Oxide Nanophosphors for Infrared Mini Light-Emitting Diodes

被引：104

作者：

Huang, Wen-Tse ^{[1
]}

Cheng, Chiao-Ling ^{[1
]}

Bao, Zhen ^{[1
]}

Yang, Chia-Wei ^{[4
]}

Lu, Kuang-Mao ^{[4
]}

Kang, Chieh-Yu ^{[4
]}

Lin, Chih-Min ^{[4
]}

Liu, Ru-Shi ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan

[2] Natl Taipei Univ Technol, Dept Mech Engn, Taipei 106, Taiwan

[3] Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 106, Taiwan

[4] Everlight Elect Co Ltd, New Taipei 238, Taiwan

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2019年 / 58卷 / 07期

关键词：

light emitting diodes; mesoporous structures; silica nanoparticles; nanophosphors; near infrared; PHOSPHORS; SPECTROSCOPY;

D O I：

10.1002/anie.201813340

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Light-emitting diodes break barriers of size and performance for displays. With devices becoming smaller, the materials also need to get smaller. Chromium(III)-doped oxide phosphors, which emit near-infrared (NIR) light, have recently been used in small electronic devices. In this work, mesoporous silica nanoparticles were used as nanocarriers. The nanophosphor ZnGa2O4:Cr3+,Sn4+ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71 +/- 7nm. It emitted light at 600-850nm; the intensity was optimized by tuning the doping ratio of Cr3+ and Sn4+. Meanwhile, the light conversion efficiency increased from 7.8% to 37% and the molar concentration increased from 0.125m to 0.5m. The higher radiant flux of 3.3mW was obtained by operating an input current of 45mA. However, the NIR nanophosphor showed good performance on mini light-emitting diode chips.

引用

页码：2069 / 2072

页数：4

共 28 条

[1] Facile synthesis of KCl: Sm3+ nanophosphor as a new OSL dosimetric material achieved through charge transfer between the defect states [J].