Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

被引：6

作者：

Nitta, J

Lin, YP

Koga, T

Akazaki, T

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Japan Sci & Technol Corp, CREST, Atsugi, Kanagawa 2430198, Japan

[3] Japan Sci & Technol Corp, PRESTO, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

g-factor; InAs-inserted InGaAs/InAlAs heterostructure; Shubnikov-de Hass oscillations; coincidence method;

D O I：

10.1016/j.physe.2003.08.051

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：429 / 432

页数：4

共 14 条

[1] IMPROVED INALAS/INGAAS HEMT CHARACTERISTICS BY INSERTING AN INAS LAYER INTO THE INGAAS CHANNEL [J].