Electrical Characteristics of Horizontally and Vertically Oriented Few-Layer Graphene on Si-Based Dielectrics

被引：2

作者：

Behura, Sanjay K. ^{[1
,2
,5
]}

Yang, Qiaoqin ^{[3
]}

Hirose, Akira ^{[4
]}

Nayak, Sasmita ^{[1
]}

Jani, Omkar ^{[1
]}

Mukhopadhyay, Indrajit ^{[2
]}

机构：

[1] Gujarat Energy Res & Management Inst, Res Innovat & Incubat Ctr, Solar Energy Res Wing, Gandhinagar 382007, Gujarat, India

[2] Pandit Deendayal Petr Univ, Sch Solar Energy, Gandhinagar 382007, Gujarat, India

[3] Univ Saskatchewan, Dept Mech Engn, Saskatoon, SK S7N 5A9, Canada

[4] Univ Saskatchewan, Dept Phys & Engn Phys, Plasma Phys Lab, Saskatoon, SK S7N 5E2, Canada

[5] Univ Illinois, Dept Chem Engn, 810 S Clinton St, Chicago, IL 60607 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Nanostructures; Vapor Deposition; Atomic Force Microscopy; Raman Spectroscopy; Defects; Heterojunction; THEORETICAL SIMULATION; RAMAN-SPECTROSCOPY; OXIDE; GRAPHITE; HYDROGENATION; REDUCTION; DISORDER; GROWTH;

D O I：

10.1166/jnn.2016.11028

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Horizontally and vertically oriented few-layer graphenes have been synthesized directly on SiO2 coated Si substrates via thermal and hot-filament chemical vapor deposition, respectively. The effect of the direction of mass flow on the fabrication of graphene film is analysed and a plausible mechanism is proposed. The graphene/p-Si heterojunction is fabricated and tested for its potential in optoelectronic devices. Rectification behaviour is observed at the interface of graphene/p-Si under dark conditions. A dark current of 1.1 mA with an ideality factor of 1.5, in addition of a high rectification ratio of 15.99 at +/- 0.5 V is found for the vertically oriented graphene/p-Si heterojunction.

引用

页码：6246 / 6251

页数：6

共 50 条

[1] Vertically oriented few-layer graphene as an electron field-emitter
Behura, Sanjay K.
Mukhopadhyay, Indrajit
Hirose, Akira
Yang, Qiaoqin
Jani, Omkar
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (09): : 1817 - 1821
[2] Flake Electrical Conductivity of Few-Layer Graphene
Mousavi, Hamze
Khodadadi, Jabbar
SCIENTIFIC WORLD JOURNAL, 2014,
[3] Field emission from vertically aligned few-layer graphene
Malesevic, Alexander
Kemps, Raymond
Vanhulsel, Annick
Chowdhury, Manish Pal
Volodin, Alexander
Van Haesendonck, Chris
JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)
[4] Effect of catalyst film thickness on the structures of vertically-oriented few-layer graphene grown by PECVD
Qi, Jun Lei
Zhang, Fu
Wang, Xu
Zhang, Li Xia
Cao, Jian
Feng, Ji Cai
RSC ADVANCES, 2014, 4 (84) : 44434 - 44441
[5] The photoelectric characteristics of a few-layer graphene/Si Schottky junction solar cell
Ma, Xiying
Gu, Weixia
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2015, 29 (02):
[6] Ultrafast terahertz response in photoexcited, vertically grown few-layer graphene
Fu, Maixia
Quan, Baogang
He, Jingwen
Yao, Zehan
Gu, Changzhi
Li, Junjie
Zhang, Yan
APPLIED PHYSICS LETTERS, 2016, 108 (12)
[7] Vertically oriented few-layer graphene-nanocup hybrid structured electrodes for high-performance supercapacitors
Qi, Jun Lei
Wang, Xu
Lin, Jing Huang
Zhang, Fu
Feng, Ji Cai
Fei, Wei-Dong
JOURNAL OF MATERIALS CHEMISTRY A, 2015, 3 (23) : 12396 - 12403
[8] Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene
Chu, Tao
Chen, Zhihong
ACS NANO, 2014, 8 (04) : 3584 - 3589
[9] Electrical Conductivity of Films Formed by Few-Layer Graphene Structures
Manzhos, R. A.
Vasil'ev, V. P.
Krivenko, A. G.
RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2018, 91 (03) : 388 - 391
[10] Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz
Aimaganbetov, Kazybek
Almas, Nurlan
Kurbanova, Bayan
Muratov, Dauren
Serikkanov, Abay
Insepov, Zinetula
Tokmoldin, Nurlan
MATERIALS, 2022, 15 (15)

← 1 2 3 4 5 →