New generations of infrared detectors based on HgCdTe

被引：4

作者：

Destefanis, G ^{[1
]}

机构：

[1] CEA, LETI, SLIR, F-38054 Grenoble 9, France

来源：

COMPTES RENDUS PHYSIQUE | 2003年 / 4卷 / 10期

关键词：

infrared detectors; HgCdTe; IRCMOS; high definition infrared imaging; molecular beam epitaxy;

D O I：

10.1016/j.crhy.2003.10.011

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

The technology of very high performance cooled infrared detectors made with HgCdTe has progressed continuously for ten years and reached today an industrial maturity that allows the production of large size arrays at a more and more reasonable cost. At the same time, new prototypes of more complex sensors have appeared (megapixel arrays, multicolour arrays, high definition long linear arrays,...) that show the strong potentialities of this very high performance technology. This paper presents the technology developed in France and gives the state of the art of products available in industry; it then focuses on some very recent realizations of advanced prototypes made at LETI (dualband arrays, megapixel arrays,...). (C) 2003 Academie des sciences. Publie par Elsevier SAS. Tous droits reserves.

引用

页码：1109 / 1120

页数：12

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