Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

被引：8

作者：

Chen, Tai-You ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Huang, Chien-Chang ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Chiu, Po-Shun ^{[1
]}

Chou, Po-Cheng ^{[1
]}

Liu, Rong-Chau ^{[3
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Chung Shan Inst Sci & Technol, Tao Yuan 32544, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 11期

关键词：

GaN; Pd; plasma treatment; Schottky diode; surface roughness; GAS SENSORS; FILM; TEMPERATURE;

D O I：

10.1109/TED.2011.2166269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response S-r of 2.05 x 10(5) and a large Schottky barrier height variation ratio (Delta phi(B)/phi(air)) of 36.3% upon exposure to a 1% H-2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 mu A/s. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

引用

页码：4079 / 4086

页数：8

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