Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

被引：4

作者：

Acharya, Ananta R. ^{[1
]}

Thoms, Brian D. ^{[2
]}

Nepal, Neeraj ^{[3
,5
]}

Eddy, Charles R., Jr. ^{[4
]}

机构：

[1] Georgia So Univ, Dept Phys, Statesboro, GA 30460 USA

[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[3] Amer Assoc Engn Educ, Washington, DC 20034 USA

[4] US Naval Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

[5] Naval Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2015年 / 33卷 / 02期

关键词：

THIN-FILMS; HYDROGEN; DESORPTION; ADSORPTION; DEPOSITION; DEFECTS; GAAS;

D O I：

10.1116/1.4901873

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs-Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 +/- 0.06) eV and pre-exponential factor of (1.5 +/- 0.5) x 10(5) s(-1). (C) 2014 American Vacuum Society.

引用

页数：5

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