Microstructure of ErBa2Cu3O7-δ films with BaZrO3 dispersion pinning centers for high JC applications

被引：11

作者：

Ito, M

Mukaida, M

Ohazama, T

Kita, R

Ichinose, A

Horii, S

Saito, A

Matsumoto, K

Yoshida, Y

Koike, K

Hirose, F

Ohshima, S

机构：

[1] Yamagata Univ, CREST, JST, Mukaida Lab,Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan

[2] Shizuoka Univ, Hamamatsu, Shizuoka 4328561, Japan

[3] CRIEPI, Yokosuka, Kanagawa 2400196, Japan

[4] Univ Tokyo, Bunkyo Ku, Tokyo 1138685, Japan

[5] Kyoto Univ, Kyoto 6068510, Japan

[6] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[7] JST, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2005年 / 426卷

关键词：

surface resistance; critical current density; BZO;

D O I：

10.1016/j.physc.2005.02.109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ErBa2Cu3O7-delta thin films with BaZrO3 dispersion pinning centers for high J(C) applications were grown using ErBa2Cu3O7-delta targets with various BaZrO3 contents. The J(C) improvement at high applied magnetic fields was observed for the ErBa2Cu3O7-delta films with BaZrO3 dispersion pinning centers. From the cross-sectional transmission electron microscope images of the ErBa2Cu3O7-delta films With BaZrO3 dispersion pinning centers, we believe that the BaZrO3 nano-particles in ErBa2Cu3O7-delta films play a role of pinning centers. Increase of the amount of BaZrO3 nano-particles in ErBa2Cu3O7-delta films induced drastic reduction of the surface resistance (R-S). This result suggests that the ErBa2Cu3O7-delta films with BaZrO3 nano-particles can be applied to high power microwave emitting devices. (c) 2005 Published by Elsevier B.V.

引用

页码：1415 / 1418

页数：4

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