Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

被引：17

作者：

Toure, Gnima ^{[1
]}

Hubert, Guillaume ^{[1
]}

Castellani-Coulie, Karine ^{[2
]}

Duzellier, Sophie ^{[1
]}

Portal, Jean-Michel ^{[2
]}

机构：

[1] Off Natl Etud & Rech Aerosp, French Aerosp Lab, F-31055 Toulouse, France

[2] IM2NP UMR CNRS 6242 IMT, F-13451 Marseille 20, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

Multi collection mechanism; prediction; single event upset; SPICE modelling; SRAM; SOFT ERRORS; CHARGE; MODEL; NM;

D O I：

10.1109/TNS.2011.2110662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed.

引用

页码：862 / 869

页数：8

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