Strong spin-orbit interactions and weak antilocalization in carbon-doped p-type GaAs/AlxGa1-xAs heterostructures

被引：64

作者：

Grbic, Boris ^{[1
]}

Leturcq, Renaud ^{[1
]}

Ihn, Thomas ^{[1
]}

Ensslin, Klaus

Reuter, Dirk ^{[2
]}

Wieck, Andreas D. ^{[2
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Ruhr Univ Bochum, Angew Festkorperphys, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.77.125312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a comprehensive study of the low-field magnetoresistance in carbon-doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: a beating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak antilocalization dip in the magnetoresistance. The spin-orbit-induced splitting of the heavy hole subband at the Fermi level is determined to be around 30% of the total Fermi energy. The phase-coherence length of holes of around 2.5 mu m at a temperature of 70 mK, extracted from weak antilocalization measurements, is promising for the fabrication of phase-coherent p-type nanodevices.

引用

页数：8

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