Electronic structure calculations on molecular photo-FET

被引：0

作者：

Kratochvilova, I. ^{[1
]}

Pavelka, M. ^{[2
,5
]}

Nespurck, S. ^{[3
]}

Sworakowski, J. ^{[4
]}

Zalis, S. ^{[2
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Na Slovance 2, Prague 18221 8, Czech Republic

[2] Inst Phys Chem, Prague 18221 8, Czech Republic

[3] Inst Macromol Chem, Prague 16206 6, Czech Republic

[4] Inst Phys & Theoret Chem, PL-50370 Wroclaw, Poland

[5] Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, Prague 12116 2, Czech Republic

来源：

RECENT PROGRESS IN COMPUTATIONAL SCIENCES AND ENGINEERING, VOLS 7A AND 7B | 2006年 / 7A-B卷

关键词：

molecular electronics; photochromic molecules; electronic structure; DFT calculations;

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

A construction of photo-FET device in which source-drain current in a semiconductor film is influenced by photo formed dipolar fields associated with charge carrier traps in a photoactive "gate" layer is presented. The DFT calculations on phthalocyanine, its oxidation and reductions products and dimers under influence of the dipole and electric field were done in order to characterize the possible charge carriers.

引用

页码：1547 / +

页数：2

共 10 条

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