Flexibility properties of type-II InAs/GaSb SL to design MWIR pin photodiodes

被引：1

作者：

Christol, P. ^{[1
,2
]}

Delmas, M. ^{[1
,2
]}

Rodriguez, J. B. ^{[1
,2
]}

Giard, E. ^{[3
]}

Ribet-Mohamed, I. ^{[3
]}

Imbert, J. ^{[3
,4
]}

Derelle, S. ^{[3
]}

Trinite, V. ^{[4
]}

机构：

[1] Univ Montpellier, IES, UMR 5214, F-34000 Montpellier, France

[2] CNRS, IES, UMR 5214, F-34000 Montpellier, France

[3] Off Natl Etud & Rech Aerosp, F-91761 Palaiseau, France

[4] III V Lab, F-91767 Palaiseau, France

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES XII | 2015年 / 9370卷

关键词：

InAs/GaSb Superlattice; dimensionality; MWIR Photodiode; period design; SUPERLATTICES;

D O I：

10.1117/12.2076569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/GaSb superlattice (SL) is a peculiar quantum system for infrared detection, where electrical and optical properties are directly governed by the composition and the periodicity of the InAs/GaSb cell. Indeed, several structures with different InAs to GaSb thickness ratios in each SL period, can target the same cut-off wavelength. Likewise, the type of conductivity of the non-intentionally doped SL structure is also linked to the InAs/GaSb SL period. The objective of this communication is to use the flexibility properties of InAs/GaSb SL to design and then to fabricate by MBE a pin photodiode where the active zone is made of different SL periods. Electrical and electro-optical characterizations are reported. The results show that SL structure for the MWIR domain can be designed by combining the best of each SL periods.

引用

页数：9

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