PbTeThin Films Grown by PLD Method

被引：0
|
作者：
Virt, I. S. [1 ]
Tur, Y. [1 ]
Adamiak, S. [2 ]
Cieniek, B. [2 ]
Lopatynskyi, I. Ye [3 ]
Frugynskyi, M. S. [3 ]
机构：
[1] Drogobych State Pedag Univ, Drogobych, Ukraine
[2] Univ Rzeszow, Rzeszow, Poland
[3] Natl Univ Lviv Polytech, Lvov, Ukraine
来源：
PROCEEDINGS OF THE 2018 IEEE 8TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP-2018) | 2018年
关键词：
lead chalcogenides films; pulsed laser deposition; nanoindentation; nanomechanical parameters; NANOINDENTATION;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we report on the structural, mechanical and electrical properties of nanocryst alline lead telluride thin films as a n- and p- type semiconductor deposited on glass substrates at different temperature PLD method. The structure and morphology of the films are characterized by means of X-ray diffractions (XRD) patterns, scanning electron microcopy (SEM).
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页数：3
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