Rectifying characteristics of sputter-deposited SiGe diodes

被引：6

作者：

Ru, GP ^{[1
]}

Wang, GW ^{[1
]}

Jiang, YL ^{[1
]}

Huang, W ^{[1
]}

Qu, XP ^{[1
]}

Zhu, SY ^{[1
]}

Li, BZ ^{[1
]}

机构：

[1] Fudan Univ, ASIC & Syst State Key Lab, Dept Microelect, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期

关键词：

D O I：

10.1116/1.1580842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe. (C) 2003 American Vacuum Society.

引用

页码：1301 / 1305

页数：5

共 50 条

[41] Sputter-deposited amorphous-like tungsten [J].

Radic, N ;

Tonejc, A ;

Ivkov, J ;

Dubcek, P ;

Bernstorff, S ;

Medunic, Z .

SURFACE & COATINGS TECHNOLOGY, 2004, 180 :66-70

[42] Sputter-deposited Be ablators for NIF target capsules [J].

McEachern, R ;

Alford, C ;

Cook, R ;

Makowiecki, D ;

Wallace, R .

FUSION TECHNOLOGY, 1997, 31 (04) :435-441

[43] Sodium superionic conductor sputter-deposited coatings [J].

Horwat, D ;

Billard, A .

IONICS, 2005, 11 (1-2) :120-125

[44] HYDROGEN DIFFUSIVITY IN SPUTTER-DEPOSITED FETI FILM [J].

AMANO, M ;

NAKAMURA, K .

TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1988, 29 (04) :308-313

[45] Oxidation behavior of sputter-deposited NiCrAlY coating [J].

Li, MH ;

Zhang, ZY ;

Sun, XR ;

Li, JG ;

Yin, E ;

Hu, WY ;

Guan, HR ;

Hu, ZQ .

SURFACE & COATINGS TECHNOLOGY, 2003, 165 (03) :241-247

[46] Flexible Sputter-Deposited Carbon Strain Sensor [J].

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Nguyen, Cuong M. ;

Chiao, Jung-Chih .

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[47] Ultrathin sputter-deposited plasmonic silver nanostructures [J].

Goetz, Selina ;

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Dimopoulos, Theodoros ;

Trassl, Stephan .

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[48] Characterization of sputter-deposited TiPdNi thin films [J].

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Wu, JS .

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[49] MORPHOLOGIES OF RF SPUTTER-DEPOSITED SOLID LUBRICANTS [J].

ANDERSSON, KAB ;

KARLSSON, SE ;

OHMAE, N .

VACUUM, 1977, 27 (04) :379-382

[50] Structural relaxation in sputter-deposited silica glass [J].

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Saito, Kazuya ;

Ikushima, Akira J. .

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