Rectifying characteristics of sputter-deposited SiGe diodes

被引：6

作者：

Ru, GP ^{[1
]}

Wang, GW ^{[1
]}

Jiang, YL ^{[1
]}

Huang, W ^{[1
]}

Qu, XP ^{[1
]}

Zhu, SY ^{[1
]}

Li, BZ ^{[1
]}

机构：

[1] Fudan Univ, ASIC & Syst State Key Lab, Dept Microelect, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期

关键词：

D O I：

10.1116/1.1580842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe. (C) 2003 American Vacuum Society.

引用

页码：1301 / 1305

页数：5

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