Rectifying characteristics of sputter-deposited SiGe diodes

被引：6

作者：

Ru, GP ^{[1
]}

Wang, GW ^{[1
]}

Jiang, YL ^{[1
]}

Huang, W ^{[1
]}

Qu, XP ^{[1
]}

Zhu, SY ^{[1
]}

Li, BZ ^{[1
]}

机构：

[1] Fudan Univ, ASIC & Syst State Key Lab, Dept Microelect, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期

关键词：

D O I：

10.1116/1.1580842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe. (C) 2003 American Vacuum Society.

引用

页码：1301 / 1305

页数：5

共 50 条

[21] Characteristics of tin whiskers formed on sputter-deposited films - an aging study [J].

Winterstein, JP ;

LeBret, JB ;

Norton, MG .

JOURNAL OF MATERIALS RESEARCH, 2004, 19 (03) :689-692

[22] SPUTTER-DEPOSITED FILMS FOR DISPLAY DEVICES [J].

FRASER, DB .

THIN SOLID FILMS, 1972, 13 (02) :407-412

[23] Sputter-deposited Mo and reactively sputter-deposited Mo-N films as barrier layers against Cu diffusion [J].

Chuang, Jui-Chang ;

Tu, Shuo-Lun ;

Chen, Mao-Chieh .

Thin Solid Films, 1999, 346 (01) :299-306

[24] Sputter-deposited Mo and reactively sputter-deposited Mo-N films as barrier layers against Cu diffusion [J].

Chuang, JC ;

Tu, SL ;

Chen, MC .

THIN SOLID FILMS, 1999, 346 (1-2) :299-306

[25] Organic light-emitting diodes with radio frequency sputter-deposited electron injecting electrodes [J].

Suzuki, H ;

Hikita, M .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2276-2278

[26] Organic light-emitting diodes with radio frequency sputter-deposited electron injecting electrodes [J].

NTT Basic Research Lab, Kanagawa, Japan .

Appl Phys Lett, 16 (2276-2278)

[27] Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films [J].

Shen, YG .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2003, 359 (1-2) :158-167

[28] Increasing electrical conductivity in sputter-deposited Si/SiGe multilayers through electrical pulse based annealing [J].

Pichanusakorn, P. ;

Elsner, N. B. ;

Bandaru, P. R. .

ELECTRONICS LETTERS, 2008, 44 (21) :1274-U60

[29] FRACTAL AGGREGATES IN SPUTTER-DEPOSITED FILMS - COMMENT [J].

SMITH, DT ;

VALLES, JM ;

HALLOCK, RB .

PHYSICAL REVIEW LETTERS, 1985, 54 (24) :2646-2646

[30] Sputter-deposited Al-Au coatings [J].

Mitterer, C ;

Lenhart, H ;

Mayhofer, PH ;

Kathrein, M .

INTERMETALLICS, 2004, 12 (05) :579-587

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