Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

被引:39
|
作者
Huang, Xian-Xiong [1 ]
Zhang, Tian-Fu [1 ]
Wang, Wei [1 ]
Ge, Peng-Zu [1 ]
Tang, Xin-Gui [1 ]
机构
[1] Guangdong Univ Technol, Guangzhou Higher Educ Mega Ctr, Sch Phys & Optoelect Engn, Guangzhou 510006, Peoples R China
基金
中国国家自然科学基金;
关键词
PbHfO3 antiferroelectric films; Energy storage; Thermal stability; Fatigue endurance; ELECTRIC FATIGUE; LARGE ENHANCEMENT; DENSITY; CAPACITORS; BEHAVIOR;
D O I
10.1016/j.matdes.2021.109666
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO3 (PHO) AFE films were prepared for the first time and themicrostructure, AFE property and energy-storage performance were studied. X-ray diffraction analysis indicated that annealing temperature played a key role in the crystallinity and phase composition. Due to the coexistent of fine grains and amorphous phase, PHO AFE films annealed at 650 degrees C displayed not only optimal energy-storage density and energy efficiency, but also excellent thermal stability and fatigue endurance. Compared with films annealed at 750 degrees C, the recoverable energy-storage density and energy efficiency in 650 degrees C annealing samples increased by 50% and 100%, respectively. These results demonstrate that PHO film is a promising candidate for applications in power electronics systems. (C) 2021 The Authors. Published by Elsevier Ltd.
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页数:7
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