Thermal investigation of high power optical devices by transient testing

被引：96

作者：

Farkas, G ^{[1
]}

Vader, QV

Poppe, A

Bognár, G

机构：

[1] MicReD Ltd, H-1112 Budapest, Hungary

[2] Univ Budapest Technol & Econ, Dept Electron Devices, H-1521 Budapest, Hungary

[3] Lumileds Lighting BV, NL-5680 AK Best, Netherlands

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2005年 / 28卷 / 01期

关键词：

light emitting diodes (LEDs); opto-electronic devices; thermal measurement;

D O I：

10.1109/TCAPT.2004.843197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In case of opto-electronic devices, the power applied LED on the device leaves in a parallel heat and light transport, the interpretation of R-th is not obvious. The paper shows results of a combined optical and thermal measurement for the characterization thermal of power light emitting diodes (LEDs). A model explaining R-th changes at different current levels is proposed.

引用

页码：45 / 50

页数：6

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