Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy

被引：2

作者：

Dorokhin, M. V. ^{[1
]}

Zdoroveishev, A. V. ^{[1
]}

Malysheva, E. I. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Sholina, A. E. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Lobachevsky Phys Tech Res Inst, Nihzni Novgorod 603950, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2012年 / 6卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

GROWTH;

D O I：

10.1134/S1027451012060079

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 10(14) cm(-2) leads to the formation of an array of large QDs with variable composition In (x) Ga1 - x As. The effect is explained within a model of In and Ga atom interdiffusion.

引用

页码：511 / 514

页数：4

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