Evolution of silicon sensors characteristics of the current CMS tracker

被引：2
|
作者：
Barth, C. [1 ]
机构：
[1] KIT, Inst Expt Kemphys IEKP, D-76137 Karlsruhe, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 658卷 / 01期
关键词：
Bias voltage scan; Silicon strip sensor; Full depletion voltage; Irradiation; Hamburg Model; Annealing;
D O I：
10.1016/j.nima.2011.05.045
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The CMS silicon strip tracker is the largest detector of its kind. It is expected to operate at the LHC for more than 10 years. In order to quantify aging effects, it is important to keep track of the evolution of fundamental detector properties under radiation and thermal fluctuations. Our aim is to define monitoring procedures to determine the characteristics regularly. In this paper we focus on the silicon sensor's full depletion voltage. We present the first results obtained with two different methods: a standard one with signal from particles and a newly developed approach based on noise. In addition we compare our output with the C-V measurements performed during the construction. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：6 / 10
页数：5
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