Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

被引：5

作者：

Shi Wei ^{[1
]}

Ma Xiang-Rong ^{[1
,2
]}

机构：

[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China

[2] Xinjiang Normal Univ, Inst Phys & Elect Enginerting, Urumqi 830054, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0256-307X/28/12/124201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Unique experimental phenomena are discovered in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch (PCSS) and the peculiar transmission characteristics are exhibited in the experiment. The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS. By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS, a detailed statistical analysis and theoretical explanations are expounded. The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation (LSA) mode when the conditions of 5 x 10(4) s.cm(-3) <= n(0)/f <= 3 x 10(5) s.cm(-3) and n(0) L >= 10(13) cm(-2) must be met in the switch, with n(0) being carrier concentration and.. the frequency. The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in) behavior at high bias voltage, so the withstand voltage and service life for PCSS are improved.

引用

页数：4

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