Slow light in a semiconductor waveguide at gigahertz frequencies
被引:137
作者:
Mork, J
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机构:
Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, DenmarkTech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
Mork, J
[1
]
Kjær, R
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机构:
Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, DenmarkTech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
Kjær, R
[1
]
van der Poel, M
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机构:
Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, DenmarkTech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
van der Poel, M
[1
]
Yvind, K
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机构:
Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, DenmarkTech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
Yvind, K
[1
]
机构:
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
来源:
OPTICS EXPRESS
|
2005年
/
13卷
/
20期
关键词:
D O I:
10.1364/OPEX.13.008136
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
We experimentally demonstrate slow-down of light by a factor of three in a 100 mu m long semiconductor waveguide at room temperature and at a record-high frequency of 16.7 GHz. It is shown that the group velocity can be controlled all-optically as well as through an applied bias voltage. A semi-analytical model based on the effect of coherent population oscillations and taking into account propagation effects is derived and is shown to well account for the experimental results. It is shown that the carrier lifetime limits the maximum achievable delay. Based on the general model we analyze fundamental limitations in the application of light slow-down due to coherent population oscillations. (c) 2005 Optical Society of America.