Mechanical properties characterization of c-plane (0001) and m-plane (10-10) GaN by nanoindentation examination

被引：23

作者：

Fujikane, Masaki ^{[1
]}

Inoue, Akira ^{[1
]}

Yokogawa, Toshiya ^{[1
]}

Nagao, Shijo ^{[2
]}

Nowak, Roman ^{[2
]}

机构：

[1] Panasonic Corp, Adv Devices Dev Ctr, 3-1-1 Yagumo Naka Machi, Moriguchi, Osaka 5708501, Japan

[2] Aalto Univ, Nordic Hysitron Lab, FL-02015 Espoo, Finland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; VPE; dislocations; elastic moduli; Young's modulus; nanoscale deformation; SURFACE DEFORMATION; SAPPHIRE; INDENTATION; CRYSTAL; PLASTICITY;

D O I：

10.1002/pssc.200983641

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanical properties of m-plane (10-10) GaN single crystal was measured by nanoindentation examination for the first time. Young's modulus, Berkovich hardness and conical hardness were 284.2 GPa, 15.0 GPa and 15.7 GPa for m-plane GaN respectively. In contrast, those values in c-plane (0001) GaN were higher such as 323.8 GPa, 20.0 GPa and 21.2 GPa, respectively. Cathodoluminescence observed dislocation density distribution on m-plane GaN surface which was gradually decreased following the direction from -c axis edge to +c axis edge. By analyzing the correlation between dislocation density distribution and yield shear stress, we derived a relational equation that reprised the inverse Hall-Petch relation. This study suggested the possibility for evaluating the reliability for GaN based light emitting device by nanoindentation technique. [GRAPHICS] The typical P-h data obtained by nanoindentation in the m-plane GaN crystal performed with the conical indenter. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3